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HiPerFET TM
Power MOSFETs
N-Channel Enhancement Mode
Avalanche Rated, Low Q g , High dv/dt
Preliminary data sheet
IXFA 3N80
IXFP 3N80
V DSS = 800 V
I D25 = 3.6 A
R DS(on) = 3.6 W
t rr ￡ 250 ns
Symbol
Test Conditions
Maximum Ratings
TO-220 (IXFP)
V DSS
V DGR
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C; R GS = 1 M W
800
800
V
V
V GS
V GSM
Continuous
Transient
± 20
± 30
V
V
G
DS
D (TAB)
I D25
T C = 25 ° C
3.6
A
I DM
I AR
T C = 25 ° C, pulse width limited by T JM
T C = 25 ° C
14.4
3.6
A
A
TO-263 (IXFA)
E AR
E AS
T C = 25 ° C
10
400
mJ
mJ
G
S
D (TAB)
dv/dt
P D
I S ￡ I DM , di/dt ￡ 100 A/ m s, V DD ￡ V DSS ,
T J ￡ 150 ° C, R G = 2 W
T C = 25 ° C
5
100
V/ns
W
G = Gate
S = Source
D = Drain
TAB = Drain
T J
T JM
T stg
-55 to +150
150
-55 to +150
° C
° C
° C
T L
1.6 mm (0.063 in) from case for 10 s
300
° C
Features
M d
Mounting torque (TO-220)
1.13/10 Nm/lb.in.
l
International standard packages
Weight
TO-220
TO-263
4
2
g
g
l
l
Low R DS (on)
Rated for unclamped Inductive load
Switching (UIS)
Easy to mount
Space savings
High power density
Symbol
V DSS
V GS(th)
Test Conditions
V GS = 0 V, I D = 1 mA
V DS = V GS , I D = 1 mA
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
min. typ. max.
800 V
2.5 4.5 V
Advantages
l
l
l
I GSS
V GS = ± 20 V DC , V DS = 0
± 100
nA
I DSS
V DS = V DSS
V GS = 0 V
T J = 25 ° C
T J = 125 ° C
50
1
m A
mA
R DS(on)
V GS = 10 V, I D = 0.5 I D25
Pulse test, t ￡ 300 m s, duty cycle d ￡ 2 %
3.6
W
? 2000 IXYS All rights reserved
98746 (09/00)
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